Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Active Matrix Devices Posters

MicroLED Pixel Circuit with A Novel NMOS-Oxide TFT Inverter for Reducing Falling Time and Enhancing Gray-Level Expression

Student

Description:

In this paper, we propose a new circuit that significantly reduces the falling time by adopting a novel oxide thin-film transistor (TFT)-based inverter for pulse width modulation (PWM). Compared to existing NMOS-only pixel circuits that rely solely on the SWEEP signal, the falling time is significantly reduced to 0.125 ?s, enabling the expression of up to 25 gray levels without wavelength shift or pulse distortion.