Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Emerging Technologies and Applications Posters

Leaky Antiferroelectric Oxide TFT for Physical Reservoir Computing Devices Achieving BEOL Compatibility with Microwave Annealing

Description:

Neuromorphic devices with BEOL compatibility present promising potential for edge applications. In this study, we employed MWA to develop a leaky antiferroelectric HZO oxide TFT for BEOL applications. We formed leaky HZO with MWA at 350 °C, endowing it with short-term memory properties. Our leaky-AFE oxide TFT effectively distinguished 16 reservoir states and achieved a high recognition accuracy of 91.44% in the MNIST handwritten digit dataset.