Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Flexible Displays and e-Paper Posters

High-Performance, Flexible Ferroelectric Thin-Film Transistor on PI Substrate

Student

Description:

We present flexible ferroelectric HZO TFTs on polyimide (PI) substrate, with nanocrystalline IGZO active semiconductor. The TFTs exhibit stabilized ferroelectricity at 350 °C, anti-clockwise hysteresis with memory window (MW) of ~5 V, subthreshold swing (SS) of 120 mV/decade, and Ion/Ioff ratio of ~8.9×106. The MW of the flexible FE-TFTs changes a little upon mechanical bending strain (MBS) of 0.32% at 2 mm radius.