Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Active Matrix Devices Posters

Self-Aligned Bottom-Gate Top-Contact Vertical-Channel In-Ga-Zn-Oxide Thin-Film Transistor

Student

Description:

We show a simple process utilizing the self-align of drain and source contact to produce bottom-gate vertical-channel In-Ga-Zn-Oxide (IGZO) thin-film transistors (TFTs) with a 400-nm effective channel length. The reported device showed promising performance with a 10^6 on-off ratio and 112 ?A/mm current per channel width (measured at Vds=0.1 V).