Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Active Matrix Devices Posters

Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short-Channel Thin-Film Transistors

Student

• 

  Professor of Advanced Display Research Center

  Jin Jang , PhD

  Kyung Hee University

Description:

We report a chloroform treatment method to reduce oxygen vacancies (Vo) and hydroxyl group (-OH) defects in oxide semiconductor thin film for short channel length thin-film transistor (TFT). This method is very simple and cost-effective. The reduction of Vo and -OH group defects after chloroform treatment is confirmed by XPS measurement. We fabricated short channel coplanar c-IGTO and amorphous InGaO (a-IGO) TFTs with/without chloroform treatment. The average VTH shifted from -9.9 V to -0.8 V and the average SS decreased from 0.39 to 0.33 Vdec-1 for the 0.8 ?m c-IGTO TFTs. The positive bias temperature stress (PBTS) test results are excellent after treatment.