Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Active Matrix Devices Posters

Interfacial Oxidation Layer for Reliable Vertical Thin-Film Transistors

Late-News

Description:

A novel fabrication method for vertical thin-film transistors replaces spacers with gate metals and ILD with interfacial oxide layers, simplifying processes and improving performance. Optimized annealing conditions yield stable breakdown voltage, uniform oxide thickness, and favorable properties, validating interfacial oxidation as a cost-effective solution for scalable, low-power next-generation electronic devices.