Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Active Matrix Devices Posters

Argon Plasma-Induced Rare-metal-free Amorphous Oxide Source-Gated Transistors

Student Late-News

Description:

Source-gated transistors using solution-processed amorphous tin (IV) oxide were developed with selective argon plasma treatment under the source region. It effectively created a Schottky contact with the ohmic metal source, eliminating the need for Schottky metals. This approach promotes advancements in low-power electronics, providing sustainable solutions for future technological applications.