Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Emissive, Micro-LED, and Quantum-Dot Displays Posters

Boosting Light Extraction in AlGaN-Based Deep Ultraviolet Micro-LEDs Through p-GaN Layer Removal

Late-News

Description:

In this study, we propose an AlGaN-based deep ultraviolet micro-light-emitting diode (DUV Micro-LED) with the removal of the contact layer p-GaN, and based on this, we investigate the effects of different concentrations of the hole injection layer. The research shows that the proposed p- GaN-free LED structure can significantly enhance the device's light extraction efficiency (LEE), thereby greatly improving the external quantum efficiency (EQE). Meanwhile, the angular emission intensity of the p-GaNfree LED structure can be improved by increasing the doping concentration of the hole injection layer.