Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Emissive, Micro-LED, and Quantum-Dot Displays Posters

Photoluminescence Analysis for Mitigating Sidewall Surface Nonradiative Recombination of n-GaN in Micro-LEDs Using Time-Dependent Isotropic Dry Etching

Late-News

Description:

We show significant improvement on photoluminescence intensity of n-type Gallium Nitride surface by using a damage-recovery isotopic dry etching technique to remove the plasma damaged layer. The average photoluminescence intensity exhibits an approximate 173% increase after 60 mins-etching, compared with the n-GaN without isotropic etching. Our findings pave the way for a significant step towards commercialization of ?LED displays for AR/VR, phones and smart watches.