Thursday, May 2025

05:00 PM - 08:00 PM

Room: 220A

Session: Display Manufacturing Posters

Systematic Study on Scanning Direction of Excimer Laser Annealing in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Description:

The bright points caused by off-state leakage current constricted the reliability of LTPS TFT. The effect of ELA scanning direction on TFT properties was demonstrated. The trap state densities of grain boundary and poly-Si/SiO2 interface and barrier were calculated to clarify the mechanism of high off-state leakage current.