Tuesday, May 2025
11:10 AM - 11:30 AM
Room: LL21CD
Session: Display Manufacturing Using Metal Oxide
Enabling Next-Generation Metal-Oxide Backplane Technology by Atomic Layer Deposition
Invited
Description:
Plasma Enhanced Atomic Layer Deposition (PEALD) dielectrics was developed for metal oxide thin-film transistors. The improvement on Vth uniformity, SS tunability, and stability were previously inaccessible by conventional PECVD dielectrics. Our PEALD provides uniform and high-quality films with accurate control of precursor/plasma and fast purge architecture, which is scalable up to Gen8 size.