Tuesday, May 2025

11:10 AM - 11:30 AM

Room: LL21CD

Session: Display Manufacturing Using Metal Oxide

Enabling Next-Generation Metal-Oxide Backplane Technology by Atomic Layer Deposition

Invited

Description:

Plasma Enhanced Atomic Layer Deposition (PEALD) dielectrics was developed for metal oxide thin-film transistors. The improvement on Vth uniformity, SS tunability, and stability were previously inaccessible by conventional PECVD dielectrics. Our PEALD provides uniform and high-quality films with accurate control of precursor/plasma and fast purge architecture, which is scalable up to Gen8 size.