Thursday, May 2025

10:40 AM - 11:00 AM

Room: LL21EF

Session: New Oxide TFTs and Applications

Amorphous p-Channel Tellurium Oxide Transistors

Invited

• 

  Chair Professor

  Yong-Young Noh , Prof.

  Pohang University of Science and Technology

Description:

We report the amorphous p-type tellurium-suboxide semiconductors for high-performance and stable p-channel TFTs. Theoretical analysis revealed a delocalized valence band with shallow acceptor states from undercoordinated tellurium 5p defect bands and selenium alloying realized high-performance, uniform, stable p-channel TFTs with an average hole mobility of 15 cm^2 V^-1 s^-1 and an on/off current ratio of ~10^7.