Thursday, May 2025

03:10 PM - 03:30 PM

Room: LL21EF

Session: Reliable Oxide TFTs

Challenges of Atomic-Layer-Deposited Oxide Semiconductor Channels Beyond PVD: Material, Devices, and M3D Stacked Structures

Invited

• 

  Professor

  Jin-Seong Park , PhD

  Hanyang University

Description:

This study explores ALD-based oxide semiconductors, highlighting in-situ composition control, atomic-scale ordering, and interface engineering. High-mobility (>100 cm²/V·s) IGZO and stable p-type SnO. devices are achieved via optimized ALD processes. We demonstrate monolithic 3D-stacked complementary transistors and propose N?O plasma for addressing mobility-stability trade-offs.