Friday, May 2025
09:20 AM - 09:40 AM
Room: LL21AB
Session: Glass-Based Semiconductor IC Packaging for Chiplet Integration
Effect of Electroplating Additives on Copper Protrusion of Metallized Through-Glass Vias (TGVs)
Description:
Glass demonstrates exceptional high-frequency performance due to its superior dielectric properties. This work proposes impurities from additives cause vacancies, which, under thermal stress due to CTE mismatch between Cu and glass, aggregate and lead to Cu protrusion of TGV-Cu. Reducing impurity can minimize protrusion, enhancing the reliability of TGV-Cu structures.