Thursday, May 2025

03:50 PM - 04:10 PM

Room: LL21EF

Session: Reliable Oxide TFTs

Hydrogen-Free Oxide Thin-Film Transistor Toward Resolving Hydrogen-Associated Instability

Distinguished

• 

  Professor

  Mamoru Furuta , PhD

  Kochi University of Technology

Description:

We propose and demonstrate the concept of hydrogen-free (H-free) amorphous oxide semiconductor thin-film transistor (AOS TFT) to resolve hydrogen-associated instability of the TFT. The H-free In–Ga–Zn–Sn–O (IGZTO) TFT showed field-effect mobility of 22.5 cm2/Vs and excellent stability under positive and negative gate bias stresses for 7200 s at a stress temperature of 60 °C.