Friday, May 2025

09:40 AM - 10:00 AM

Room: 220B

Session: Novel Structure TFTs

Polycrystalline Indium Oxide Thin-Film Transistors Formed by Solid-Phase Crystallization

Invited

Description:

We demonstrated polycrystalline indium oxide (poly-InOx:H) TFTs with bottom-gate (BG) and self-aligned top-gate (SATG) structures. Both poly-InOx:H TFTs operated in enhancement mode with field-effect mobility of ~30.0 cm2V-1s-1 and excellent Vt stability under NBTS. The results demonstrated that poly-oxide is a strong candidate for opening a new route to improve the mobility and reliability of oxide TFTs.