Tuesday, May 2025
11:50 AM - 12:10 PM
Room: LL21CD
Session: Display Manufacturing Using Metal Oxide
Silicon-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for High-Mobility Oxide TFT
Description:
Silicon oxide were deposited on the 6th generation glass by plasma-enhanced atomic layer deposition (PEALD). PEALD process proved to be an effective method to deposit robust thin films, suggesting its potential as a replacement for conventional passivation layers in high mobility oxide TFT process.