Tuesday, May 2025

11:50 AM - 12:10 PM

Room: LL21CD

Session: Display Manufacturing Using Metal Oxide

Silicon-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for High-Mobility Oxide TFT

Description:

Silicon oxide were deposited on the 6th generation glass by plasma-enhanced atomic layer deposition (PEALD). PEALD process proved to be an effective method to deposit robust thin films, suggesting its potential as a replacement for conventional passivation layers in high mobility oxide TFT process.