Guanhua Yang is an associate professor at the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS). His research focuses on 3D DRAM based on oxide semiconductors and its integration into back-end-of-line (BEOL) processes. He has contributed to more than 50 papers including IEDM/VLSI, Nat. Elec./Nat. Comm., and IEEE EDL/TED. He received the IEEE Symposium on VLSI Best Demo Paper Award (2024) and the Excellent Wiley Authorship Award (2023).