Thursday, May 2025

01:30 PM - 01:50 PM

Room: LL21EF

Session: High Mobility Oxide TFTs

Normally Off Top-Gate Self-Aligned Field-Effect Transistor Using Crystal InOx with Field-Effect Mobility of Around 100 cm2/Vs

Distinguished

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  Group Leader

  Yukinori Shima

  Semiconductor Energy Laboratory Co., Ltd.

Description:

We developed a crystal InOx transistor with normally-off characteristics and a high field-effect mobility of around 100, more specifically, 90 cm2/Vs in our 3.5th generation glass (600 mm x720 mm) line. By combining our unique organic light-emitting diode patterning technology, a high-luminance, low-power-consumption 8K4K display was also successfully developed