Wednesday, May 2025
10:00 AM - 10:20 AM
Room: LL21EF
Session: microLED Devices I
A Bottom-Up InGaN Technology for Ultra-High Brightness R,G,B-Emitting MicroLEDs
Late-News
Description:
We present a bottom-up technology for producing dislocation-free, strain-relaxed InGaN microLEDs in the form of sub-micron scale hexagonal platelets. The use of InGaN barrier material enables high indium-content quantum wells with peak emission tunable from blue to deep red (> 670 nm). These platelets do not suffer from plasma induced damage and exhibit internal quantum efficiency values up to 60% for deep red emitting quantum wells. We further show red microLEDs exhibiting dominant wavelengths above 630 nm for drive currents up to 50 A/cm2, which is well suited for wide color gamut, and ultra-high brightness displays.