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      1. Home
      2. Symposium Poster Presentations
      3. Track: Active Matrix Devices
      Back
      • Active Matrix Devices

        • P.1
          Improving the Negative Bias Illumination Stress-Induced Instability of High Mobility Oxide Thin-Film Transistors
        • P.3
          High Uniform and Stable Oxide TFT Devices with High Mobility for AMOLED Display
        • P.4
          A New LTPS Pixel Structure to Improve the 1Hz Low-Brightness AOD Flicker Effect
        • P.5
          Competing Degradation Mechanisms in Flexible Dual-Gate InGaZnO Thin-Film Transistor under Mechanical Stresses
        • P.6
          Power-Saving Solution for AMOLED Displays Based on Cathode Segmentation
        • P.7
          High-Reliability LTPS-TFT with Super-Low Gate Resistivity
        • P.8
          4,032ppi Vth Compensation Pixel Circuit for OLEDoS
        • P.9
          High Mobility Oxide and Novel Dual-Gate Pixel Structure Application to Gaming Notebook LCDs
        • P.10
          MicroLED Pixel Circuit with A Novel NMOS-Oxide TFT Inverter for Reducing Falling Time and Enhancing Gray-Level Expression
        • P.11
          A Novel 5T2C LTPO Pixel Circuit for MicroLED Display with Simultaneous Compensation and Programming
        • P.12
          Achieving High-Performance Ln-IZO TFT with Top-Gate Self-Aligned Structure on Large Substrates
        • P.14
          Micro Light-Emitting Diode Pixel Circuit Based on LTPO TFTs Without Threshold Voltage Compensation Structure
        • P.15
          LTPS-TFT-Based Scan Driver Circuit with Stable Dual-Polarity Outputs by Bootstrapping Without Pre-Charging
        • P.16
          CMOS-Type Scan Driver Circuit Based on LTPO TFTs
        • P.17
          Low-Power Gate Driver Circuit with Variable Pulse Width for LTPO-Based AMOLED Displays
        • P.18
          Self-Aligned Bottom-Gate Top-Contact Vertical-Channel In-Ga-Zn-Oxide Thin-Film Transistor
        • P.19
          Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short-Channel Thin-Film Transistors
        • P.20
          High Subthreshold Swing Using High-Performance Dual-Gate IZO/IGZTO TFTs for AMOLED Display
        • P.21
          A Wide-Data-Range Pixel Circuit for High-Pixel-Density Mobile Displays Using Double-Gate Oxide TFTs
        • P.221
          Multi-Frequency Gate Driver in the Controllable Region for Low Power TFT-LCD Application
        • P.222
          Femto-Ampere Leakage Current of Low Temperature Poly-Silicon TFTs in OLED Panel
        • P.223
          Crystallized IGTO as a Transparent Electrode for Replacing Conventional S/D Metal Electrodes in Transparent Displays.
        • P.224
          Interfacial Oxidation Layer for Reliable Vertical Thin-Film Transistors
        • P.225
          A High-Performance Micro Light-Emitting Diode Pixel Circuit Based on LTPO TFTs using a Pseudo Digital Driving Method
        • P.226
          Argon Plasma-Induced Rare-metal-free Amorphous Oxide Source-Gated Transistors
        • P.227
          Insight into the Effect of the Thickness of Gate Insulator on the Hysteresis by TCAD Simulation
        • P.228
          An Advanced Flexible OLED Anti-ESD Design
        • P.229
          Improved PBTS Reliability of Dual-Gate a-IGZO TFT by Bottom Interface Optimization
        • P.230
          Study on the Impact of Static Electricity on LTPS TFTs and Its Mechanism in Flexible OLED Devices Manufacturing Process
        • P.231
          An AMOLED LTPS Pixel Circuit Compensating for Threshold Voltage Variations, OLED Degradation, and IR Drop
        • P.232
          Micro-LED Pixel Circuit with Threshold Voltage Compensation Using a-IGZO TFT
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